Ever wondered how atom probe tomography advances our understanding of semiconductors and improves device performance?

In today's episode, we dive deep into the world of semiconductors as we explore the fascinating realm of atom probe tomography. Our guest expert, David Larson, sheds light on the intricacies of this powerful materials characterization technique. From minimizing damage and improving yield to overcoming challenges in data reconstruction, David shares insights on the latest advancements and future possibilities in the field. Tune in to gain a deeper understanding of semiconductors and atom probe technology's role in their analysis.

Join us as we discuss the following:

The use of a Focused Ion Beam (FIB) at liquid nitrogen temperature to minimize damage and improve yield
Challenges of yield and spatial distortion in atom probe technology
How different laser wavelengths can enhance reconstruction and yield in heterogeneous structures
How modeling and in situ measurements play a crucial role in predicting the field of operation
The limitations, growth, and future improvements of atom probe technology, including its application in analyzing real devices

Contact Markus Kuhn on LinkedIn for any potential guest requests or episode ideas.

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